Measurements of dichroic bow-tie antenna arrays with integrated cold-electron bolometers using YBCO oscillators

• Leonid S. Revin,
• Dmitry A. Pimanov,
• Alexander V. Chiginev,
• Anton V. Blagodatkin,
• Viktor O. Zbrozhek,
• Andrey V. Samartsev,
• Anastasia N. Orlova,
• Dmitry V. Masterov,
• Alexey E. Parafin,
• Victoria Yu. Safonova,
• Anna V. Gordeeva,
• Andrey L. Pankratov,
• Leonid S. Kuzmin,
• Anatolie S. Sidorenko,
• Silvia Masi and
• Paolo de Bernardis

Beilstein J. Nanotechnol. 2024, 15, 26–36, doi:10.3762/bjnano.15.3

• single SIN tunnel junction. The frequency response of the receiving matrix channel was calculated by summing up the power absorbed in each active resistance of the receiving element. In the course of the work, the frequency response of the dipole antenna matrix with integrated CEBs was optimized by means

• stage is the deposition of about 70 nm of Al at an angle of −45° to form a SIN tunnel junction. Thus, as a normal layer we use the hybrid superconducting/ferromagnetic structure, which allows for decreasing the absorber volume and also for suppressing the Andreev heating current [22] to improve detector

• The results of measurements correspond to the simulation results rather well. There is a certain mismatch, which can be explained by the substrate thickness deviation from the desired value as well as improper barrier thickness due to variations in oxidation time, so the CEB SIN tunnel junction

A distributed active patch antenna model of a Josephson oscillator

• Vladimir M. Krasnov

Beilstein J. Nanotechnol. 2023, 14, 151–164, doi:10.3762/bjnano.14.16

• characteristic resistances (in ohms) for a Nb/AlOx/Nb tunnel junction with sizes a = 100 μm, b = 10 μm, d = 2 nm, d1 = d2 = 100 nm, Jc0 = 5000 (A/cm2), at T/Tc = 0.5 and f = 400 GHz. Definition of variables.

Density of states in the presence of spin-dependent scattering in SF bilayers: a numerical and analytical approach

• Tairzhan Karabassov,
• Valeriia D. Pashkovskaia,
• Nikita A. Parkhomenko,
• Anastasia V. Guravova,
• Elena A. Kazakova,
• Boris G. Lvov,
• Alexander A. Golubov and
• Andrey S. Vasenko

Beilstein J. Nanotechnol. 2022, 13, 1418–1431, doi:10.3762/bjnano.13.117

• resistance. In the regime of a fully transparent junction, γB = 0, the proximity effect is the strongest, and the θ functions are continuous at the SF interface while γB ≫ 1 corresponds to the tunnel junction limit, that is, there is no mutual impact between superconducting layer S and ferromagnetic layer F

Numerical modeling of a multi-frequency receiving system based on an array of dipole antennas for LSPE-SWIPE

• Alexander V. Chiginev,
• Anton V. Blagodatkin,
• Dmitrii A. Pimanov,
• Ekaterina A. Matrozova,
• Anna V. Gordeeva,
• Andrey L. Pankratov and
• Leonid S. Kuzmin

Beilstein J. Nanotechnol. 2022, 13, 865–872, doi:10.3762/bjnano.13.77

• current noise of 4–10 pA/Hz1/2. To optimize the receiver for better noise characteristics, we consider optimized CEBs with a single superconductor–insulator–normal (SIN) tunnel junction and a single superconductor–normal (SN) contact [12]. Combined together, they form a SINS structure. This solution can

• array matching with a SQUID readout (the total resistance of this array should be 1 Ohm). Third, the electron cooling efficiency is increased by a factor of two due to the two-fold increase in the readout for the same power going through the system. Last but not least, the absence of a second SIN tunnel

• junction suppresses the Coulomb blockade, so the absorber volume can be decreased by a factor of four, leaving the capacitance unchanged. Therefore, the current responsivity is increased from 40–45 nA/pW to 80–100 nA/pW. Thus, the total NEP for this CEB concept should also be two times better than the

Approaching microwave photon sensitivity with Al Josephson junctions

• Andrey L. Pankratov,
• Anna V. Gordeeva,
• Leonid S. Revin,
• Dmitry A. Ladeynov,
• Anton A. Yablokov and
• Leonid S. Kuzmin

Beilstein J. Nanotechnol. 2022, 13, 582–589, doi:10.3762/bjnano.13.50

• samples in a single-shot regime and outline the junction parameter range where approaching single photon sensitivity is possible. Results and Discussion In this section, we describe our experimental setup, as well as the measurement results and comparison with theory. To study the dynamics of a SIS tunnel

• junction, we have thermally anchored the sample to the mixing chamber of a He3/He4 dilution refrigerator Triton 200 from Oxford Instruments. A block diagram of the experimental setup, including filtering and room-temperature electronics, is shown in Figure 1a. The sample (Figure 1b) was mounted in an RF

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

• Frances I. Allen

Beilstein J. Nanotechnol. 2021, 12, 633–664, doi:10.3762/bjnano.12.52

Optically and electrically driven nanoantennas

• Monika Fleischer,
• Dai Zhang and
• Alfred J. Meixner

Beilstein J. Nanotechnol. 2020, 11, 1542–1545, doi:10.3762/bjnano.11.136

• spectroscopy (SERS); tip-enhanced Raman spectroscopy (TERS); tunnel junction; Editorial Optical antennas + serve to confine the energy of photons transported by a light wave to a tiny volume much smaller than the wavelength; or reversely, to convert the energy of an evanescent field that oscillates at optical

• low-background medical imaging or nanolasers [33]. Electrically driven optical antennas emit light when a bias voltage is applied to the contacted antenna arms that are forming a tunnel junction. Inelastic electron tunneling through the gap excites gap–plasmon oscillations leading to the emission of

• subject. Energy-level engineering in the gap by introducing molecules into the tunnel junction provides an additional handle to modulate photon emission from an electrically controlled optical antenna. Light emission by tunneling through a single molecule opens the door to combine electronics and quantum

Role of redox-active axial ligands of metal porphyrins adsorbed at solid–liquid interfaces in a liquid-STM setup

• Thomas Habets,
• Sylvia Speller and
• Johannes A. A. W. Elemans

Beilstein J. Nanotechnol. 2020, 11, 1264–1271, doi:10.3762/bjnano.11.110

• likely. An enhanced solubility of the ions in the aromatic solvent 1-phenyloctane may be the result of attractive anion–π interactions [24]. Conclusion MnTUPCl dissolved in 1-phenyloctane and placed in a tunnel junction yields high additional currents. We attribute them to Faradaic currents and put

Microwave photon detection by an Al Josephson junction

• Leonid S. Revin,
• Andrey L. Pankratov,
• Anna V. Gordeeva,
• Anton A. Yablokov,
• Igor V. Rakut,
• Victor O. Zbrozhek and
• Leonid S. Kuzmin

Beilstein J. Nanotechnol. 2020, 11, 960–965, doi:10.3762/bjnano.11.80

• layered high-temperature superconductors [27]. The significance of this effect depends on the ratio of thermal fluctuations kBT, the damping parameter α and the Josephson energy EJ. Here we will consider a small tunnel junction with the thermal noise intensity of γ = kBT/EJ ≥ 2 × 10−2 and α > 0.1, and

• Following the line proposed in [4], an aluminium Al/AlOx/Al tunnel junction 0.4 × 2 µm2 was fabricated using a self-aligned shadow evaporation technique. Its current–voltage characteristic shown in the inset of Figure 1 (see below) has a well-defined hysteresis. The double voltage gap of the junction is

Molecular attachment to a microscope tip: inelastic tunneling, Kondo screening, and thermopower

• Rouzhaji Tuerhong,
• Mauro Boero and
• Jean-Pierre Bucher

Beilstein J. Nanotechnol. 2019, 10, 1243–1250, doi:10.3762/bjnano.10.124

• thermopower measured across the single-molecule junction. Keywords: inelastic electron tunneling; molecular quantum dot; Kondo physics; single molecule; thermopower; tunnel junction; Introduction Scanning tunneling microscopy (STM) has the capability to detect the electron transport through a molecule not

Directional light beams by design from electrically driven elliptical slit antennas

• Shuiyan Cao,
• Eric Le Moal,
• Quanbo Jiang,
• Aurélien Drezet,
• Serge Huant,
• Jean-Paul Hugonin,
• Gérald Dujardin and
• Elizabeth Boer-Duchemin

Beilstein J. Nanotechnol. 2018, 9, 2361–2371, doi:10.3762/bjnano.9.221

• nanosource can be a nanoscale tunnel junction where the emission process relies on inelastic electron tunneling effects [20]. A central issue for miniaturized electrical light sources is the control of their emission direction, especially given that SPP excitation with electrons results in a broad power

• with a minor linear contribution (along the major axis) that increases with eccentricity. Future improvements of these optical antennas include the integration of the electrical SPP nanosource in the design of the microstructure (e.g., as an integrated metal-oxide–metal tunnel junction) and the

Electromigrated electrical optical antennas for transducing electrons and photons at the nanoscale

• Arindam Dasgupta,
• Mickaël Buret,
• Nicolas Cazier,
• Marie-Maxime Mennemanteuil,
• Reinaldo Chacon,
• Kamal Hammani,
• Jean-Claude Weeber,
• Juan Arocas,
• Laurent Markey,
• Gérard Colas des Francs,
• Alexander Uskov,
• Igor Smetanin and
• Alexandre Bouhelier

Beilstein J. Nanotechnol. 2018, 9, 1964–1976, doi:10.3762/bjnano.9.187

• class of nanodevices enabling a bilateral transduction between electrons and photons. At the heart of the device is a tunnel junction that may either emit light upon injection of electrons or generate an electrical current when excited by a light wave. The current study explores a technological route

• and for interconnecting an electronic control layer to a photonic architecture. Keywords: electromigration; Fowler–Nordheim; hot-electron emission; inelastic electron tunneling; optical antennas; transition voltage; tunnel junction; Introduction The constant evolution of information technologies

• lithography, respectively. Each electrode is connected to a common ground (centered square) and can be individually addressed by a set of peripheral electrodes. To create a tunnel junction that will eventually form the active feedgap of an optical antenna, we perform an operator-controlled electromigration of

Josephson effect in junctions of conventional and topological superconductors

• Alex Zazunov,
• Albert Iks,
• Miguel Alvarado,
• Alfredo Levy Yeyati and
• Reinhold Egger

Beilstein J. Nanotechnol. 2018, 9, 1659–1676, doi:10.3762/bjnano.9.158

• end states. Using Green’s function techniques, the topological superconductor is alternatively described by the low-energy continuum limit of a Kitaev chain or by a more microscopic spinful nanowire model. We show that for the simplest S–TS tunnel junction, only the s-wave pairing correlations in a

Comparative study of post-growth annealing of Cu(hfac)₂, Co₂(CO)₈ and Me₂Au(acac) metal precursors deposited by FEBID

• Marcos V. Puydinger dos Santos,
• Aleksandra Szkudlarek,
• Artur Rydosz,
• Carlos Guerra-Nuñez,
• Fanny Béron,
• Kleber R. Pirota,
• Stanislav Moshkalev,
• José Alexandre Diniz and
• Ivo Utke

Beilstein J. Nanotechnol. 2018, 9, 91–101, doi:10.3762/bjnano.9.11

• storage, ferroelectric tunnel junction memristors, metal interconnects for high performance integrated circuits in microelectronics and nano-optics applications, especially in the areas of plasmonics and metamaterials. Focused-electron-beam-induced deposition (FEBID) is a maskless direct-write tool

Beyond Moore’s technologies: operation principles of a superconductor alternative

• Igor I. Soloviev,
• Nikolay V. Klenov,
• Sergey V. Bakurskiy,
• Mikhail Yu. Kupriyanov,
• Alexander L. Gudkov and
• Anatoli S. Sidorenko

Beilstein J. Nanotechnol. 2017, 8, 2689–2710, doi:10.3762/bjnano.8.269

• junctions possess a large capacitance, they are usually shunted by external resistors to avoid LC resonances. The resistance Rn is approximately equal to the resistance of the shunt, Rn ≈ Rs, because Rs is much smaller than the tunnel junction resistance. For Nb-based junctions the characteristic frequency

• determined by the dimensions of a Josephson junction. The area of a Josephson junction is closely related to its critical current density, jc. This parameter is one of the most important in the standard Nb-based tunnel junction fabrication process. It is fixed by materials properties of the insulating

Analysis of self-heating of thermally assisted spin-transfer torque magnetic random access memory

• Austin Deschenes,
• Sadid Muneer,
• Mustafa Akbulut,
• Ali Gokirmak and
• Helena Silva

Beilstein J. Nanotechnol. 2016, 7, 1676–1683, doi:10.3762/bjnano.7.160

• , positive polarity, and low thermal anchoring with thermal boundary resistance configurations. Interestingly it is also found that due to the tunneling heat, Peltier effect, device geometry, and numerous interfacial layers around the magnetic tunnel junction (MTJ), most of the heat is dissipated on the

• ) and anti-parallel (OFF) states of two ferromagnetic domains on either side of a thin insulating barrier. These ferromagnetic domains and the insulating barrier make up the magnetic tunnel junction (MTJ) of the STT-MRAM device. The device is switched between the ON and OFF states by passing a current

• temperature are obtained by solving the coupled current (Equation 1) and heat (Equation 2) equations: where is the current density, σ is the electrical conductivity, is the electric field, is the external current source used to model the tunnel junction, ρ is the mass density, Cp is the heat capacity, T is

Nonlinear thermoelectric effects in high-field superconductor-ferromagnet tunnel junctions

• Stefan Kolenda,
• Peter Machon,
• Detlef Beckmann and
• Wolfgang Belzig

Beilstein J. Nanotechnol. 2016, 7, 1579–1585, doi:10.3762/bjnano.7.152

• experimental data (see below). Experiment and Results Our samples were fabricated by e-beam lithography and shadow evaporation. The central part is a tunnel junction between ferromagnetic iron and superconducting aluminum, with a thin aluminum oxide layer as tunnel barrier. An additional copper wire is

• , together with the measurement scheme. The samples consist of a six-probe tunnel junction between a superconducting aluminum (Al) and a ferromagnetic (Fe) wire, with an overlaid copper (Cu) wire providing additional measurement leads. (b) Scheme of the generation of the linear thermoelectric effect in a FIS

Thermo-voltage measurements of atomic contacts at low temperature

• Ayelet Ofarim,
• Bastian Kopp,
• Thomas Möller,
• León Martin,
• Johannes Boneberg,
• Paul Leiderer and
• Elke Scheer

Beilstein J. Nanotechnol. 2016, 7, 767–775, doi:10.3762/bjnano.7.68

• temperature dependence of the lead resistance for the determination of ΔT was also applied in [20]. A temperature gradient achieved by a laser source has been used before for contacts realized by pores through a freestanding membrane, but the ΔT achieved was only about 50 mK for a relatively wide tunnel

• junction. Thus the ΔV values were at the resolution limit [21]. Moreover, ΔT was not measured, but simulations were applied to estimate it. Here we suggest a new method for the measurement of the temperature gradient across an atomic-scale device. In addition, we compare the measured values with

A scanning probe microscope for magnetoresistive cantilevers utilizing a nested scanner design for large-area scans

• Tobias Meier,
• Alexander Förste,
• Ali Tavassolizadeh,
• Karsten Rott,
• Dirk Meyners,
• Roland Gröger,
• Günter Reiss,
• Eckhard Quandt,
• Thomas Schimmel and
• Hendrik Hölscher

Beilstein J. Nanotechnol. 2015, 6, 451–461, doi:10.3762/bjnano.6.46

• junction consists of two ferromagnetic CoFeB-electrodes separated by a thin dielectric MgO layer, which acts like a spin-valve. The electrical conductance of the magnetic tunnel junction, therefore, strongly depends on the orientation of the magnetization of the electrodes towards each other. When

• particular, TMR sensors with a CoFeB/MgO/CoFeB magnetic tunnel junction are well known for their very high TMR values [56]. In addition, the use of a Co40Fe40B20 sensing layer leads to high strain sensitivity [57]. Those measurements, however, are done with a 4-point bending apparatus and a magnetic bias

Characterization of 10,12-pentacosadiynoic acid Langmuir–Blodgett monolayers and their use in metal–insulator–metal tunnel devices

• Saumya Sharma,
• Mohamad Khawaja,
• Manoj K. Ram,
• D. Yogi Goswami and
• Elias Stefanakos

Beilstein J. Nanotechnol. 2014, 5, 2240–2247, doi:10.3762/bjnano.5.233

• characteristics for 20 to 30 monolayers of PDA in a Ni–PDA–Ni tunnel junction configuration, with an earlier turn-on voltage for 20 monolayer of PDA compared to that for 30 monolayer of PDA. Conclusion The Langmuir–Blodgett film deposition technique was successfully used to deposit highly conformal and less

• the thin, insulating layer in a metal–insulator–metal tunnel junction. The top contact deposition and probing procedures were optimized for MIM diode measurements to reduce damage on the underlying PDA monolayer assembly. UV-induced polymerization of PDA introduced intermolecular cross-linking in this

Control theory for scanning probe microscopy revisited

• Julian Stirling

Beilstein J. Nanotechnol. 2014, 5, 337–345, doi:10.3762/bjnano.5.38

• linearity of the feedback response. We shall refer to this log tunnel current as where is the time dependent operator fully describing the tunnel junction, the I–V amplifier, and the logarithm operation. The feedback controller then compares I(t) with a set-point, P, and tries to correct for discrepancies

• cancel the exponential dependence of the tunnel junction, and the gain of the I–V amplifier is simply linear, which is irrelevant if we are working in arbitrary units. To specifically consider the effect of the bandwidth of the SPM pre-amplifier, the functional form of must be considered in more detail

• to further explore the parameter space of the SPM PI controller. The only component in Figure 3 that is not modelled, is the tunnel junction and the logarithmic amplifier, . Considering the tunnel junction as an exponential decay with distance produces a current that is first amplified by an I–V